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Comparison of β-galactosidase immobilization by entrapment in and adsorption on poly(2-hydroxyethylmethacrylate) membranes
Schottky barrier height shifts depending on the interfacial layer as well as a change of the interface state charge with the forward bias while considering the presence of bulk (semiconductor) series resistance are discussed ... -
The effects of the time-dependent and exposure time to air on Au epilayer n-Si Schottky diodes
Cetinkara, HA; Saglam, M; Turut, A; Yalcin, N (E D P Sciences, 1999)A study on Au/n-Si Schottky barrier diodes (SBDs) parameters with and without thin native oxide layer fabricated on n-type Si grown by LPE (Liquid-Phase Epitaxy) technique has been made. The native oxide layer with different ...